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Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material
Cheng Wei Shih,
Albert Chin
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電子研究所
研究成果
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同行評審
47
引文 斯高帕斯(Scopus)
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Keyphrases
Thin-film Transistors
100%
Flexible Substrate
100%
High Mobility
100%
Passivation Materials
100%
On-state Current
66%
Nanostructured Zinc Oxide
66%
High-resolution
33%
High Performance
33%
Crystallinity
33%
Subthreshold Slope
33%
Fast Response
33%
HfLaO
33%
Zinc Oxide Thin Films
33%
Room Temperature
33%
High Field-effect Mobility
33%
Low Power Operation
33%
Oxide Thin-film Transistors
33%
Flexible Display
33%
Passivated
33%
Drain Voltage
33%
Potential Barrier
33%
X-ray Photoelectron Spectroscopy Analysis
33%
Flexible Electronic Devices
33%
Scattering Center
33%
Engineering
Passivation
100%
Flexible Substrate
100%
Thin-Film Transistor
100%
Nanocrystalline
50%
Subthreshold Slope
25%
Crystallinity
25%
Ray Photoelectron Spectroscopy
25%
Fast Response
25%
High Resolution
25%
Room Temperature
25%
Low Power Operation
25%
Drain Voltage
25%
Flexible Electronics
25%
Material Science
Thin-Film Transistor
100%
Zinc Oxide
50%
Nanocrystalline
50%
X-Ray Photoelectron Spectroscopy
25%