TY - JOUR
T1 - Reliable nitride-based near-ultraviolet light-emitting diodes with meshed p-GaN
AU - Kuo, C. W.
AU - Chen, C. M.
AU - Feng, H. C.
AU - Kuo, Cheng-Huang
PY - 2008/12/1
Y1 - 2008/12/1
N2 - This investigation presents nitride-based near ultraviolet (n-UV) light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.29, 3.31 and 3.39 V while output powers were 7.5, 9.0 and 10.6 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency. It was also found that we could use such a meshed p-GaN layer to achieve reliable nitride-based n-UV LEDs.
AB - This investigation presents nitride-based near ultraviolet (n-UV) light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.29, 3.31 and 3.39 V while output powers were 7.5, 9.0 and 10.6 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency. It was also found that we could use such a meshed p-GaN layer to achieve reliable nitride-based n-UV LEDs.
UR - http://www.scopus.com/inward/record.url?scp=77951229872&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778418
DO - 10.1002/pssc.200778418
M3 - Conference article
AN - SCOPUS:77951229872
SN - 1862-6351
VL - 5
SP - 2080
EP - 2082
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 6
T2 - 7th International Conference of Nitride Semiconductors, ICNS-7
Y2 - 16 September 2007 through 21 September 2007
ER -