Reliable nitride-based near-ultraviolet light-emitting diodes with meshed p-GaN

C. W. Kuo, C. M. Chen, H. C. Feng, Cheng-Huang Kuo

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

This investigation presents nitride-based near ultraviolet (n-UV) light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.29, 3.31 and 3.39 V while output powers were 7.5, 9.0 and 10.6 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency. It was also found that we could use such a meshed p-GaN layer to achieve reliable nitride-based n-UV LEDs.

原文English
頁(從 - 到)2080-2082
頁數3
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
5
發行號6
DOIs
出版狀態Published - 1 12月 2008
事件7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
持續時間: 16 9月 200721 9月 2007

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