Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

Ming Jiue Yu, Ruei Ping Lin, Yu Hong Chang, Tuo-Hung Hou

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-Temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-Temperature process below 200 oC, excellent transistor characteristics, including a current on/off ratio of 109, steep subthreshold swing of 0.1 V/decade, high breakdown voltage of 45 V, and robust bias stress reliability have been demonstrated.

    原文English
    主出版物標題2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面1-2
    頁數2
    ISBN(電子)9781467394789
    DOIs
    出版狀態Published - 25 4月 2016
    事件International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016 - Hsinchu, Taiwan
    持續時間: 25 4月 201627 4月 2016

    出版系列

    名字2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016

    Conference

    ConferenceInternational Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016
    國家/地區Taiwan
    城市Hsinchu
    期間25/04/1627/04/16

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