@inproceedings{45ab1d7c7a8c47d891ba522a6491498a,
title = "Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration",
abstract = "The wide band-gap a-IGZO is a promising channel material to realize high-voltage transistors that can be easily integrated on logic ICs by low-Temperature 3D stacking. This monolithic 3D integration would enable on-chip power management to improve power consumption and integration density. We report a high-voltage a-IGZO TFT with the high-k Al2O3 gate dielectric. By using a low-Temperature process below 200 oC, excellent transistor characteristics, including a current on/off ratio of 109, steep subthreshold swing of 0.1 V/decade, high breakdown voltage of 45 V, and robust bias stress reliability have been demonstrated.",
author = "Yu, {Ming Jiue} and Lin, {Ruei Ping} and Chang, {Yu Hong} and Tuo-Hung Hou",
year = "2016",
month = apr,
day = "25",
doi = "10.1109/VLSI-TSA.2016.7480525",
language = "English",
series = "2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "2016 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2016",
address = "United States",
note = "null ; Conference date: 25-04-2016 Through 27-04-2016",
}