摘要
A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH3. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.
原文 | English |
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頁(從 - 到) | 407-410 |
頁數 | 4 |
期刊 | IEE Proceedings: Circuits, Devices and Systems |
卷 | 152 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 10月 2005 |