Reliability studies of Hf-doped and NH 3 -nitrided gate dielectric for advanced CMOS application

C. W. Yang*, Y. K. Fang, S. F. Chen, C. S. Lin, C. Y. Lin, W. D. Wang, T. H. Chou, P. J. Lin, M. F. Wang, Tuo-Hung Hou, L. G. Yao, S. C. Chen, M. S. Liang


研究成果: Article同行評審


A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH 3 . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO 2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.

頁(從 - 到)407-410
期刊IEE Proceedings: Circuits, Devices and Systems
出版狀態Published - 1 十月 2005


深入研究「Reliability studies of Hf-doped and NH <sub>3</sub> -nitrided gate dielectric for advanced CMOS application」主題。共同形成了獨特的指紋。