Reliability studies of Hf-doped and NH 3 -nitrided gate dielectric for advanced CMOS application

C. W. Yang*, Y. K. Fang, S. F. Chen, C. S. Lin, C. Y. Lin, W. D. Wang, T. H. Chou, P. J. Lin, M. F. Wang, Tuo-Hung Hou, L. G. Yao, S. C. Chen, M. S. Liang

*此作品的通信作者

研究成果: Article同行評審

摘要

A novel technique is proposed for forming high-K dielectric of HfSiON by sequentially doping base oxide with Hf and nitridation with NH 3 . The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared to conventional SiO 2 gate dielectric at the same equivalent oxide thickness (EOT), Additionally, negligible flatband voltage shift is achieved with this technique. Excellent performances in electrical stressing are also demonstrated by the dielectric.

原文English
頁(從 - 到)407-410
頁數4
期刊IEE Proceedings: Circuits, Devices and Systems
152
發行號5
DOIs
出版狀態Published - 1 十月 2005

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