@inproceedings{616c26cd750048aeb261158670916eae,
title = "Reliability of ultrathin high-κ dielectrics on chemical-vapor deposited 2D semiconductors",
abstract = "2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS2. The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO2/PTCDA stack is over 8.42 MV/cm, which is two times that of HfO2/Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under EBD = 6.5 MV/cm, which shows 85% improvement than HfO2/Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO2/Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.",
author = "Zhihao Yu and Hongkai Ning and Cheng, {Chao Ching} and Weisheng Li and Lei Liu and Wanqing Meng and Zhongzhong Luo and Taotao Li and Songhua Cai and Peng Wang and Chang, {Wen Hao} and Chien, {Chao Hsin} and Yi Shi and Yong Xu and Li, {Lain Jong} and Xinran Wang",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; null ; Conference date: 12-12-2020 Through 18-12-2020",
year = "2020",
month = dec,
day = "12",
doi = "10.1109/IEDM13553.2020.9371917",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3.2.1--3.3.4",
booktitle = "2020 IEEE International Electron Devices Meeting, IEDM 2020",
address = "United States",
}