TY - GEN
T1 - Reliability of ultrathin high-κ dielectrics on chemical-vapor deposited 2D semiconductors
AU - Yu, Zhihao
AU - Ning, Hongkai
AU - Cheng, Chao Ching
AU - Li, Weisheng
AU - Liu, Lei
AU - Meng, Wanqing
AU - Luo, Zhongzhong
AU - Li, Taotao
AU - Cai, Songhua
AU - Wang, Peng
AU - Chang, Wen Hao
AU - Chien, Chao Hsin
AU - Shi, Yi
AU - Xu, Yong
AU - Li, Lain Jong
AU - Wang, Xinran
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/12/12
Y1 - 2020/12/12
N2 - 2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS2. The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO2/PTCDA stack is over 8.42 MV/cm, which is two times that of HfO2/Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under EBD = 6.5 MV/cm, which shows 85% improvement than HfO2/Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO2/Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.
AB - 2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS2. The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO2/PTCDA stack is over 8.42 MV/cm, which is two times that of HfO2/Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under EBD = 6.5 MV/cm, which shows 85% improvement than HfO2/Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO2/Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.
UR - http://www.scopus.com/inward/record.url?scp=85102924308&partnerID=8YFLogxK
U2 - 10.1109/IEDM13553.2020.9371917
DO - 10.1109/IEDM13553.2020.9371917
M3 - Conference contribution
AN - SCOPUS:85102924308
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 3.2.1-3.3.4
BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Y2 - 12 December 2020 through 18 December 2020
ER -