Reliability of ultrathin high-κ dielectrics on chemical-vapor deposited 2D semiconductors

Zhihao Yu, Hongkai Ning, Chao Ching Cheng, Weisheng Li, Lei Liu, Wanqing Meng, Zhongzhong Luo, Taotao Li, Songhua Cai, Peng Wang, Wen Hao Chang, Chao Hsin Chien, Yi Shi, Yong Xu, Lain Jong Li, Xinran Wang*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

2D semiconductors are considered to be one of the most promising channel materials to extend transistor scaling. However, the integration of ultra-thin dielectrics on 2D semiconductors has been challenging, and the reliability has not been investigated to date. Here, using monolayer 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) molecules as interface layer, we realize EOT as low as 1.7 nm on large-area monolayer CVD MoS2. The reliability of ultrathin high-κ dielectric on 2D semiconductors is systematically studied for the first time. The median breakdown (BD) field of HfO2/PTCDA stack is over 8.42 MV/cm, which is two times that of HfO2/Si under the same EOT. Through TDDB we project that the gate dielectric can work reliably for 10 years under EBD = 6.5 MV/cm, which shows 85% improvement than HfO2/Si. The BD current increase rate in our gate stack is several orders of magnitude smaller than HfO2/Si. The excellent reliability suggests that molecular interfacial layer is a promising dielectric technology for 2D electronics.

原文English
主出版物標題2020 IEEE International Electron Devices Meeting, IEDM 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3.2.1-3.3.4
ISBN(電子)9781728188881
DOIs
出版狀態Published - 12 十二月 2020
事件66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
持續時間: 12 十二月 202018 十二月 2020

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2020-December
ISSN(列印)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
國家/地區United States
城市Virtual, San Francisco
期間12/12/2018/12/20

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