Reliability of ultrathin gate oxides for ULSI devices

Chun Yen Chang, Chi Chun Chen, Horng-Chih Lin, Mong Song Liang, Chao-Hsin Chien, Tiao Yuan Huang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Ultrathin gate oxide, which is essential for low supply voltage and high driving capability, is indispensable four the continued scaling of ULSI technologies towards smaller and faster devices. Needless to say, the reliability of ultrathin oxide is of major concerns in the manufacturing of the state-of-the-art metal-oxide-semiconductor devices. This paper reviews the reliability issues regarding ultrathin gate oxide for present and future ULSI technologies. Issues including gate leakage current, time-dependent dielectric breakdown, poly-gate depletion, boron penetration, and plasma process-induced damage will be addressed. Several techniques such as nitrided oxide and alternative processes, which are proposed to improve gate oxide reliabilities, are also discussed.

原文English
頁(從 - 到)553-566
頁數14
期刊Microelectronics Reliability
39
發行號5
DOIs
出版狀態Published - 1 1月 1999

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