Reliability of thin SiO2

K. F. Schuegraf; Chen-Ming Hu

doi:10.1088/0268-1242/9/5/002

Reliability of thin SiO₂

K. F. Schuegraf^*, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Review article › 同行評審

106 引文斯高帕斯（Scopus）

摘要

This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO₂ breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO ₂ reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

原文	English
文章編號	002
頁（從 - 到）	989-1004
頁數	16
期刊	Semiconductor Science and Technology
卷	9
發行號	5
DOIs	https://doi.org/10.1088/0268-1242/9/5/002
出版狀態	Published - 1 12月 1994

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10.1088/0268-1242/9/5/002

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abstract = "This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO 2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.",

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N2 - This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO 2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

AB - This article reviews reliability phenomena in thin silicon dioxide. We discuss a comprehensive framework for evaluating measured SiO2 breakdown data which enables assurance of built-in oxide reliability for scaled MOS technologies. Promising technological improvements for improving SiO 2 reliability are also reviewed. We discuss an integrative view for explaining the many diverse observations about the process of oxide wear-out and failure.

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DO - 10.1088/0268-1242/9/5/002

M3 - Review article

AN - SCOPUS:0028425839

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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Reliability of thin SiO2

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Reliability of thin SiO₂