Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer

Tzu I. Tsai; Yao Jen Lee; King Sheng Chen; Jeff Wang; Chia Chen Wan; Fu Kuo Hsueh; Horng-Chih Lin; Tien-Sheng Chao; Tiao Yuan Huang

doi:10.1109/ISDRS.2007.4422398

Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer

Tzu I. Tsai, Yao Jen Lee, King Sheng Chen, Jeff Wang, Chia Chen Wan, Fu Kuo Hsueh, Horng-Chih Lin, Tien-Sheng Chao, Tiao Yuan Huang

電子物理學系

研究成果: Conference contribution › 同行評審

原文	English
主出版物標題	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422398
出版狀態	Published - 1 12月 2007
事件	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States 持續時間: 12 12月 2007 → 14 12月 2007

出版系列

名字	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
國家/地區	United States
城市	College Park, MD
期間	12/12/07 → 14/12/07

存取文件

10.1109/ISDRS.2007.4422398

其它文件與鏈接

Link to publication in Scopus

引用此

Tsai, T. I., Lee, Y. J., Chen, K. S., Wang, J., Wan, C. C., Hsueh, F. K., Lin, H-C., Chao, T-S., & Huang, T. Y. (2007). Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer. 於 2007 International Semiconductor Device Research Symposium, ISDRS [4422398] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422398

@inproceedings{5cda26df459e4fc7965a18bada91c782,

title = "Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer",

author = "Tsai, {Tzu I.} and Lee, {Yao Jen} and Chen, {King Sheng} and Jeff Wang and Wan, {Chia Chen} and Hsueh, {Fu Kuo} and Horng-Chih Lin and Tien-Sheng Chao and Huang, {Tiao Yuan}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISDRS.2007.4422398",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "null ; Conference date: 12-12-2007 Through 14-12-2007",

}

Tsai, TI, Lee, YJ, Chen, KS, Wang, J, Wan, CC, Hsueh, FK, Lin, H-C , Chao, T-S & Huang, TY 2007, Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer. 於 2007 International Semiconductor Device Research Symposium, ISDRS., 4422398, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422398

TY - GEN

T1 - Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer

AU - Tsai, Tzu I.

AU - Lee, Yao Jen

AU - Chen, King Sheng

AU - Wang, Jeff

AU - Wan, Chia Chen

AU - Hsueh, Fu Kuo

AU - Lin, Horng-Chih

AU - Chao, Tien-Sheng

AU - Huang, Tiao Yuan

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=44949196873&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422398

DO - 10.1109/ISDRS.2007.4422398

M3 - Conference contribution

AN - SCOPUS:44949196873

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -