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Reliability of p-Type Pi-Gate Poly-Si Nanowire Channel Junctionless Accumulation-Mode FETs
Dong Ru Hsieh, Kun Cheng Lin, Chia Chin Lee,
Tien Sheng Chao
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此作品的通信作者
電子物理學系
研究成果
:
Article
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同行評審
5
引文 斯高帕斯（Scopus）
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Keyphrases
Carrier Transport Mechanism
16%
Channel Doping
16%
Deterioration Rate
16%
Effective Channel
16%
Electric Field (E-field)
16%
Field-effect Transistors
100%
Gate Overdrive
16%
Gate Oxide
16%
Junctionless Accumulation Mode
100%
Mode Field
100%
Nanowire Channel
100%
Negative Gate Bias Stress
50%
On-state Current
16%
Overdrive Voltage
16%
P-type
100%
Pi-gate
100%
Poly-Si Nanowire
100%
Stress Testing
50%
Subthreshold Swing
16%
Threshold Voltage
16%
Transconductance
16%
Engineering
Effective Channel
16%
Electric Field
16%
Field-Effect Transistor
100%
Gate Bias
50%
Gate Oxide
16%
Mode Field
100%
Polysilicon
100%
Si Nanowires
100%
Transport Mechanism
16%
Material Science
Carrier Transport
16%
Field Effect Transistor
100%
Nanowire
100%
Oxide Compound
16%
Stress Analysis
50%
Earth and Planetary Sciences
Electric Field
33%
Nanowire
100%
Threshold Voltage
33%
Transconductance
33%