TY - JOUR
T1 - Reliability mechanisms of LTPS-TFT with HfO 2 gate dielectric
T2 - PBTI, NBTI, and hot-carrier stress
AU - Ma, Ming Wen
AU - Chen, Chi Yang
AU - Wu, Woei Cheng
AU - Su, Chun Jung
AU - Kao, Kuo Hsing
AU - Chao, Tien-Sheng
AU - Lei, Tan Fu
PY - 2008/5/1
Y1 - 2008/5/1
N2 -
In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO
2
gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO
2
gate dielectric is observed for the PBS and PBTI of the HfO
2
LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO
2
LTPS-TFT.
AB -
In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO
2
gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO
2
gate dielectric is observed for the PBS and PBTI of the HfO
2
LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO
2
LTPS-TFT.
KW - HfO gate dielectric
KW - Hot-carrier stress (HCS)
KW - Low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT)
KW - Negative-bias temperature instability (NBTI)
KW - Positive-bias temperature instability (PBTI)
KW - Reliability
UR - http://www.scopus.com/inward/record.url?scp=43749100691&partnerID=8YFLogxK
U2 - 10.1109/TED.2008.919710
DO - 10.1109/TED.2008.919710
M3 - Article
AN - SCOPUS:43749100691
SN - 0018-9383
VL - 55
SP - 1153
EP - 1160
JO - Ieee Transactions On Electron Devices
JF - Ieee Transactions On Electron Devices
IS - 5
ER -