Reliability enhancement of high-mobility amorphous indium-tungsten oxide thin film transistor

Po-Tsun Liu, Chih Hsiang Chang, Chih Jui Chang

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this work, a high-mobility amorphous In-W-O thin transistor (a-IWO TFT) is studied for flat panel displays applications. The effects of oxygen content on the electrical performance and reliability of a-IWO TFTs are mainly investigated by modulating oxygen partial pressure during IWO channel deposition. Experimental results show the high oxygen partial pressure will degrade the electrical stability and cause a large threshold voltage shift (ΔVT) in the a-IWO TFT device. To elucidate the origin of electrical instabilities, the interface trap densities, Dit, at the interface between gate insulator and IWO layer as well as bulk trap density, Nt, in the bulk of IWO film were extracted for comparisons. It shows that the interface states are increased as increasing oxygen partial pressures. The enhanced trapping of electron due to the increased interface states is considered to lead to large ΔVT in the TFT with increasing oxygen partial pressures.

原文English
主出版物標題2015 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
編輯Y. Kuo
發行者Electrochemical Society Inc.
頁面9-16
頁數8
版本1
ISBN(電子)9781607685395
DOIs
出版狀態Published - 1 1月 2015
事件2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015 - Lake Tahoe, United States
持續時間: 14 6月 201518 6月 2015

出版系列

名字ECS Transactions
號碼1
67
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference2015 5th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2015
國家/地區United States
城市Lake Tahoe
期間14/06/1518/06/15

指紋

深入研究「Reliability enhancement of high-mobility amorphous indium-tungsten oxide thin film transistor」主題。共同形成了獨特的指紋。

引用此