@inproceedings{3edc7844497f4f7c80adbf6cb954acfd,
title = "Reliability and performance study of ZnO co-sputtered InGaZnO thin film transistors under various ambient conditions",
abstract = "ZnO co-sputtered IGZO TFTs were fabricated and systematically investigated the impact of various annealing environments on their performance characteristics. The characteristics were improved in N2 ambient-displaying field effect mobility - 16.10 cm2/Vs, threshold voltage - 1.5V, sub-threshold swing -0.21 V/decade and NBIS shifting ∼ -2.75V.",
keywords = "Sputtering, Thin film transistors, ZnO",
author = "Nidhi Tiwari and Chauhan, {Ram Narayan} and Po-Tsun Liu and Shieh, {Han Ping D.}",
year = "2015",
month = jan,
day = "1",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "140--141",
booktitle = "22nd International Display Workshops, IDW 2015",
note = "22nd International Display Workshops, IDW 2015 ; Conference date: 09-12-2015 Through 11-12-2015",
}
