摘要
The stabilities of Si(OCH3)4 and Si(OC2H5)4 have been studied pyrolytically using highly diluted mixtures near atmospheric-pressure conditions. FTIR spectrometric analyses of the disappearance of the reactants and the formation of various major stable products allow us to qualitatively account for the global difference in the measured overall first-order decay constants: TMOS is significantly more stable than TEOS. The mechanistic implication of these results is discussed.
原文 | English |
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頁(從 - 到) | 179-184 |
頁數 | 6 |
期刊 | Materials Letters |
卷 | 12 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 10月 1991 |