摘要
Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V T roll up during dynamic stress is evaluated by incorporating field-dependent oxide trap generation. The extracted VT degradation slope during constant FN stress can be applied quantitatively to predict the VT during dynamic stress.
原文 | English |
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頁面 | 119-121 |
頁數 | 3 |
DOIs | |
出版狀態 | Published - 7月 2004 |
事件 | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 台灣 持續時間: 5 7月 2004 → 8 7月 2004 |
Conference
Conference | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 |
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國家/地區 | 台灣 |
期間 | 5/07/04 → 8/07/04 |