In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nano-rod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm -3) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate.
|頁（從 - 到）||H961-H964|
|期刊||Journal of the Electrochemical Society|
|出版狀態||Published - 31 8月 2011|