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Refractive index behavior of boron-doped silica films by plasma-enhanced chemical vapor deposition
Ray-Hua Horng
*
, F. Chen, D. S. Wuu, T. Y. Lin
*
此作品的通信作者
電子研究所
研究成果
:
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同行評審
3
引文 斯高帕斯(Scopus)
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深入研究「Refractive index behavior of boron-doped silica films by plasma-enhanced chemical vapor deposition」主題。共同形成了獨特的指紋。
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Keyphrases
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Refractive Index
100%
Boron Doping
100%
Silica Film
100%
Doped Silica
100%
Infrared Absorption
16%
Power Level
16%
Deposited Film
16%
Undoped
16%
Optical Characterization
16%
Annealing Effect
16%
Doped Films
16%
Main Peak
16%
N-N Bond
16%
Nitrogen Incorporation
16%
Absorption Studies
16%
Deposition Power
16%
Low Wavenumber
16%
Doping Mechanism
16%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Refractive Index
100%
Silicon Dioxide
100%
Refractivity
100%
Infrared Absorption
16%
Deposited Film
16%
Flow Rate
16%
Power Level
16%
Annealing Effect
16%
Flow Velocity
16%
Material Science
Silicon Dioxide
100%
Film
100%
Boron
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Refractive Index
100%
Chemical Engineering
Plasma Enhanced Chemical Vapor Deposition
100%
Film
100%