Refractive index behavior of boron-doped silica films by plasma-enhanced chemical vapor deposition

Ray-Hua Horng*, F. Chen, D. S. Wuu, T. Y. Lin

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The optical characterization of boron-doped silica films grown by plasma-enhanced chemical vapor deposition (PECVD) is reported. The refractive index of the deposited film is found to increase with the B 2 H 6 flow rate, which is in contrast to the theoretical expectation. Infrared absorption studies show that the Si-O main peak for the boron-doped sample shifts to lower wavenumber and broadens, as compared with that for the undoped sample. This suggests that the observed refractive index behavior is due to the contribution of the Si-N bond. To alleviate the undesired nitrogen incorporation, the refractive index of the boron-doped film was studied as a function of deposition power. It is found that the refractive index value decreases with increasing power level. Based on the above results, a boron doping mechanism for PECVD silica films is proposed. The annealing effect on the refractive index of boron-doped silica is also described.

原文English
頁(從 - 到)387-390
頁數4
期刊Applied Surface Science
92
DOIs
出版狀態Published - 1 1月 1996

指紋

深入研究「Refractive index behavior of boron-doped silica films by plasma-enhanced chemical vapor deposition」主題。共同形成了獨特的指紋。

引用此