Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Tien-Sheng Chao; Liang Yao Lee

doi:10.1143/JJAP.41.L124

Reduction of nickel-silicided junction leakage by nitrogen ion implantation

Tien-Sheng Chao^*, Liang Yao Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10^-9 A/cm², which represents 2-4 times reduction compared to conventional counterparts.

原文	American English
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	41
發行號	2 A
DOIs	https://doi.org/10.1143/JJAP.41.L124
出版狀態	Published - 1 2月 2002

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title = "Reduction of nickel-silicided junction leakage by nitrogen ion implantation",

abstract = "Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.",

keywords = "Junction, Leakage, Nickel, Nitrogen, Silicide",

author = "Tien-Sheng Chao and Lee, {Liang Yao}",

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AU - Lee, Liang Yao

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N2 - Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.

AB - Nickel-silicided junctions with low leakage by using a nitrogen implantation process are demonstrated in this paper. This technique can significantly improve the leakage problem of Ni-silicided junction. Junctions formed by this method exhibit a very low leakage current density of about 1 × 10-9 A/cm2, which represents 2-4 times reduction compared to conventional counterparts.

KW - Junction

KW - Leakage

KW - Nickel

KW - Nitrogen

KW - Silicide

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U2 - 10.1143/JJAP.41.L124

DO - 10.1143/JJAP.41.L124

M3 - Article

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VL - 41

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 A

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Reduction of nickel-silicided junction leakage by nitrogen ion implantation

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