Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier

Ching Hsueh Chiu*, Po Min Tu, Chun Yen Chang, Shih Cheng Huang, Jet Rung Chang, Hsiao-Wen Zan, Hao-Chung Kuo, Chih Peng Hsu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The UV LEDs with quaternary InAlGaN barrier exhibit higher radiative recombination rate and low efficiency droop at a high injection current because of the better band-offset ratio and the higher carrier mobility.

原文English
主出版物標題16th Opto-Electronics and Communications Conference, OECC 2011
頁面733-734
頁數2
出版狀態Published - 2011
事件16th Opto-Electronics and Communications Conference, OECC 2011 - Kaohsiung, Taiwan
持續時間: 4 7月 20118 7月 2011

出版系列

名字16th Opto-Electronics and Communications Conference, OECC 2011

Conference

Conference16th Opto-Electronics and Communications Conference, OECC 2011
國家/地區Taiwan
城市Kaohsiung
期間4/07/118/07/11

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