Reduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect-transistors using hydrogen-annealed wafer and in-situ HF-vapor treatment

Physics & Astronomy

• n-type semiconductors 100%
• metal oxide semiconductors 80%
• field effect transistors 61%
• vapors 59%
• wafers 59%
• traps 58%
• hydrogen 48%
• transconductance 28%
• integrity 27%
• threshold voltage 24%
• trapping 20%
• oxides 16%
• shift 15%

Engineering & Materials Science

• MOSFET devices 92%
• Vapors 70%
• Hydrogen 62%
• Drain current 50%
• Transconductance 47%
• Threshold voltage 43%
• Oxides 33%