Reduction of donor-like interface traps of n-type metal-oxide-semiconductor field-effect-transistors using hydrogen-annealed wafer and in-situ HF-vapor treatment

Tien-Sheng Chao*, Yu Hsin Lin, Wen Luh Yang

*此作品的通信作者

研究成果: Article同行評審

摘要

In this paper, n-type metal-oxide-semiconductor field-effect-transistors (nMOSFETs) of low donor-like interface traps are fabricated on hydrogen-annealed wafers (Hi-wafer) with an in-situ HF-vapor treatment. Gate oxide integrity is significantly improved in terms of drain current, transconductance, and threshold-voltage shift under stressing. We found the improvement is due to the significant reduction of donor-like interface trapping densities. This improvement becomes distinguished when both Hi-wafer and in-situ HF-vapor treatment are utilized.

原文English
頁(從 - 到)61-63
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號1 A
DOIs
出版狀態Published - 10 1月 2006

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