The high leakage current is the most important issue of MIC-TFT. Ni residues in the MIC-TFT is the major cause of the leakage. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process. The process is simple and without extra thermal annealing. It was found that the Ni concentration of poly-Si film with chemical oxide layer was much less than that of conventional MIC poly-Si film. As a result, the leakage current was improved.
|主出版物標題||Thin Film Transistors 10, TFT 10|
|出版狀態||Published - 1 12月 2010|
|事件||10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States|
持續時間: 11 10月 2010 → 15 10月 2010
|Conference||10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting|
|城市||Las Vegas, NV|
|期間||11/10/10 → 15/10/10|