Reduced temperature-quenching of photoluminescence from indium nitride nanotips grown by metalorganic chemical vapor deposition

Shih Chen Shi, Chia Fu Chen, Geng Ming Hsu, Jih Shang Hwang, Surojit Chattopadhyay, Zon Huang Lan, Kuei Hsien Chen, Li Chyong Chen*

*此作品的通信作者

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

We report metalorganic chemical vapor deposition of indium nitride (InN) nanotips with apex angles of 10° and length and base diameter of around 1 μm and 200 nm, respectively. The structure of the hexagonal InN nanotips growing along [002] was studied by electron microscopy and x-ray diffraction, and the optical properties were studied using temperature-dependent photoluminescence (PL) measurements. A narrow emission peak with a 18 meV full width at half maximum positioned at 0.77 eV was obtained with no visible emission. A PL quenching of only 14% was observed with a temperature scan of 15-320 K.

原文English
文章編號203103
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號20
DOIs
出版狀態Published - 14 11月 2005

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