Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment

Po-Tsun Liu*, Chih Hsiang Chang, Guang Ting Zheng, Chur Shyang Fuh, Li Feng Teng, Meng Chyi Wu, Yao Jen Lee

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (τ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.

原文English
頁(從 - 到)148-152
頁數5
期刊Thin Solid Films
619
DOIs
出版狀態Published - 30 11月 2016

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