摘要
In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (τ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.
原文 | English |
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頁(從 - 到) | 148-152 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 619 |
DOIs | |
出版狀態 | Published - 30 11月 2016 |