Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer

Ming Hui Lai, Yew-Chuhg Wu*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Ni-metal-induced crystallization (MIC) of amorphous Si (α-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the leakage current of MIC-TFT is high. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into α-Si layer during MIC process, which was simple and without extra expensive instrument. The minimum leakage current and on/off current ratio were significantly improved.

原文English
頁(從 - 到)6-9
頁數4
期刊Solid-State Electronics
64
發行號1
DOIs
出版狀態Published - 1 十月 2011

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