Redistribution of As during Pd2Si formation: Ion channeling measurements

M. Wittmer*, C. Y. Ting, I. Ohdomari, King-Ning Tu

*此作品的通信作者

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34 引文 斯高帕斯(Scopus)

摘要

We have investigated the redistribution of As during Pd2Si formation with ion channeling technique. The results show that both interstitial As and substitutional As in the Si are pushed ahead by the moving silicide-silicon interface during the growth of Pd2Si at 250 °C. This effect increases the As concentration in a region of about 100 Å beyond the interface. A model for the mechanism of As redistribution during silicide formation is suggested and implications of the effect on electrical characteristics of Schottky diodes and shallow junction devices are discussed.

原文English
頁(從 - 到)6781-6787
頁數7
期刊Journal of Applied Physics
53
發行號10
DOIs
出版狀態Published - 1 12月 1982

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