Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process

T. C. Chang*, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

46 引文 斯高帕斯(Scopus)

摘要

The interaction between low dielectric constant (low-k) hybrid organic siloxane polymer (HOSP) and O2 plasma ashing has been investigated. O2 plasma ashing is commonly performed to remove the photoresist (PR) during integrated circuit fabrication. However, dielectric loss usually occurs in the HOSP films during the PR removal process. In order to eliminate dielectric loss originating from an O2 plasma attack, hexamethyldisilazane (HMDS) treatment is proposed to repair the damage in the HOSP film. HMDS can react with Si-OH bonds and reduce moisture uptake. Moreover, the leakage current and the dielectric constant is decreased significantly when damaged HOSP film undergoes HMDS treatment. For this reason, HMDS treatment is a promising method to apply to the photoresist removal.

原文English
頁(從 - 到)F81-F84
期刊Journal of the Electrochemical Society
149
發行號8
DOIs
出版狀態Published - 8月 2002

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