Record Transconductance in L_eff30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO₂-ZrO₂Superlattice Gate Stack

We demonstrate short channel, extremely thin SOI (ETSOI, 6< nm), replacement gate nFETs down to effective gate length (Leff)∼ 30nm with low equivalent oxide thickness (EOT) negative capacitance (NC) HfO2-ZrO2 superlattice (HZH) gate stack [1-2]. Inversion capacitance measurement shows an EOT of 7 Å, which is 2.5-Å lower than typical industry HfO2 dielectrics. The transistors show record intrinsic transconductance (gmi)-2.11mS/mum, rivaling what is achieved in much shorter channel length (18nm) commercial devices such as 22FDX® technology. Importantly, the gm-Lg scaling trends deviate from industry benchmarks, showing that much larger gmi is achievable at the same channel length. Despite significantly worse series resistance, the devices show favorable performance in IonvsI on/Ioff tradeoff, providing larger I on and lower I off compared to industrial benchmarks of similar channel length.