Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics

Dong Ru Hsieh, Jia Chian Ni, Wei Ju Yeh, Tzu Chieh Hong, Zi Yang Hong, Yan Kui Liang, Huai En Luo, Michael Hsu, Ta Chun Cho, Tien Sheng Chao*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

A 5-nm-thick HfO2 anti-fuse one-time programmable (OTP) memory achieving a record-high pulsed memory window (MW) of 2.1× 108 at a low read voltage (Vread) of 1 V have been proposed and demonstrated for the first time. Furthermore, the HfO2 OTP memory shows a robust 25°C retention with an extremely stable pulsed MW > 2× 108 after 107 s. From the pulsed characteristics and reliability viewpoints, the HfO2 OTP memory is a very suitable candidate for the Internet of Things (IoTs) applications and automotive (ATV) security integrated circuits (ICs).

原文English
主出版物標題2023 Silicon Nanoelectronics Workshop, SNW 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面113-114
頁數2
ISBN(電子)9784863488083
DOIs
出版狀態Published - 2023
事件26th Silicon Nanoelectronics Workshop, SNW 2023 - Kyoto, Japan
持續時間: 11 6月 202312 6月 2023

出版系列

名字2023 Silicon Nanoelectronics Workshop, SNW 2023

Conference

Conference26th Silicon Nanoelectronics Workshop, SNW 2023
國家/地區Japan
城市Kyoto
期間11/06/2312/06/23

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