@inproceedings{fe15c504aab140b6b44c4b0c7a6c3bbb,
title = "Record-High Memory Window and Robust Retention Anti-Fuse OTP Memory: Electrical and Reliability Characteristics",
abstract = "A 5-nm-thick HfO2 anti-fuse one-time programmable (OTP) memory achieving a record-high pulsed memory window (MW) of 2.1× 108 at a low read voltage (Vread) of 1 V have been proposed and demonstrated for the first time. Furthermore, the HfO2 OTP memory shows a robust 25°C retention with an extremely stable pulsed MW > 2× 108 after 107 s. From the pulsed characteristics and reliability viewpoints, the HfO2 OTP memory is a very suitable candidate for the Internet of Things (IoTs) applications and automotive (ATV) security integrated circuits (ICs).",
author = "Hsieh, {Dong Ru} and Ni, {Jia Chian} and Yeh, {Wei Ju} and Hong, {Tzu Chieh} and Hong, {Zi Yang} and Liang, {Yan Kui} and Luo, {Huai En} and Michael Hsu and Cho, {Ta Chun} and Chao, {Tien Sheng}",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",
year = "2023",
doi = "10.23919/SNW57900.2023.10183943",
language = "English",
series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "113--114",
booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
address = "美國",
}