@inproceedings{c8269de94b4c423fb418c4a482b6810c,
title = "Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10-10Ω-cm2ρcfrom Cryogenic (5 K) to Room Temperature",
abstract = "We report the first demonstration of active boron (B) doping concentration (NA) higher than 2.50 × 1021 cm-3 in high Ge content (> 65%) Si1-x Gex using In-situ growth technique with a low temperature below 500 °C. We achieve excellent uniformities of Si1-x Gex thickness and resistivity across the entire 300 mm wafer and obtain an ultra-low as-deposited specific contact resistivity (ρc) down to 2.9 ± 2.8 × 10-10 Ω-cm2 on the sample with a high average active doping concentration (NA) of 2.80 × 1021cm-3 and Ge composition of 65%. We further detail the progression of the selective growth of such Si1 · x Gex film on advanced 3D structures. Using metal Si 1-x Gex ladder TLM (LTLM) structures, we investigate the contact properties from room temperature to cryogenic temperatures as low as 5 K, disclosing for the first time the insignificant change of ρc at such ultra-low ρc regimes.",
keywords = "In-situ doping, SiGe, cryo-temperature, specific contact resistivity",
author = "Gerui Zheng and Yuxuan Wang and Haiwen Xu and Rami Khazaka and Lutz Muehlenbein and Sheng Luo and Xuanqi Chen and Rui Shao and Zijie Zheng and Gengchiau Liang and Xiao Gong",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",
year = "2023",
doi = "10.23919/VLSITechnologyandCir57934.2023.10185320",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",
address = "美國",
}