Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• Multiple Quantum Wells 100%
• Fast Decay 100%
• Recombination Mechanism 100%
• Green Emission 66%
• Light-emitting Diodes 66%
• Slow Decay 66%
• Photon Energy 66%
• Exciton Recombination 66%
• Localized Excitons 66%
• Decay Pathways 66%
• Recombination 33%
• Indium 33%
• Activation Energy 33%
• Photoluminescence 33%
• Emission Processes 33%
• Diode Structures 33%
• Photoluminescence Properties 33%
• Composition Fluctuations 33%
• Non-radial 33%
• Excitation-emission 33%
• Thickness Variation 33%
• Green Photoluminescence 33%
• Two-pathway 33%
• Microscopy 33%
• Dynamic Photoluminescence 33%
• Microscopic Mechanism 33%
• InGaN Layer 33%
• Transient Photoluminescence 33%
• SlowFast 33%
• Delocalization Processes 33%

Chemistry

• Photoluminescence 100%
• Exciton 75%
• Reaction Activation Energy 25%
• Indium 25%
• Photon Emission 25%

Chemical Engineering

• Indium 100%