Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

Yan Cheng Lin; Ming Jui Tasi; Wu-Ching Chou; Wen-Hao Chang; Wei-Kuo Chen; Tooru Tanaka; Qixin Guo; Mitsuhiro Nishio

doi:10.1063/1.4858968

Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

Yan Cheng Lin^*, Ming Jui Tasi, Wu-Ching Chou, Wen-Hao Chang, Wei-Kuo Chen, Tooru Tanaka, Qixin Guo, Mitsuhiro Nishio

^*此作品的通信作者

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E_- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E ₊ and the E_- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

原文	English
文章編號	261905
頁（從 - 到）	1-4
頁數	4
期刊	Applied Physics Letters
卷	103
發行號	26
DOIs	https://doi.org/10.1063/1.4858968
出版狀態	Published - 23 12月 2013

存取文件

10.1063/1.4858968

其它文件與鏈接

Link to publication in Scopus

引用此

@article{4a6c7391aa7b4a5cb521b35d5bfd8cc8,

title = "Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys",

abstract = "This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.",

author = "Lin, {Yan Cheng} and Tasi, {Ming Jui} and Wu-Ching Chou and Wen-Hao Chang and Wei-Kuo Chen and Tooru Tanaka and Qixin Guo and Mitsuhiro Nishio",

year = "2013",

month = dec,

day = "23",

doi = "10.1063/1.4858968",

language = "English",

volume = "103",

pages = "1--4",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

AU - Lin, Yan Cheng

AU - Tasi, Ming Jui

AU - Chou, Wu-Ching

AU - Chang, Wen-Hao

AU - Chen, Wei-Kuo

AU - Tanaka, Tooru

AU - Guo, Qixin

AU - Nishio, Mitsuhiro

PY - 2013/12/23

Y1 - 2013/12/23

N2 - This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

AB - This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E- conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E + and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration.

UR - http://www.scopus.com/inward/record.url?scp=84891611598&partnerID=8YFLogxK

U2 - 10.1063/1.4858968

DO - 10.1063/1.4858968

M3 - Article

AN - SCOPUS:84891611598

SN - 0003-6951

VL - 103

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261905

ER -

Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys

摘要

存取文件

其它文件與鏈接

指紋

引用此