Recess channel structure for reducing source/drain series resistance in ultra-thin SOI MOSFET

Mansun Chan*, Fariborz Assaderaghi, Stephen A. Parke, Selina S. Yuen, Chen-Ming Hu, Ping K. Ko

*此作品的通信作者

研究成果: Paper同行評審

12 引文 斯高帕斯(Scopus)

摘要

Developed is a new Recess-Channel technology that significantly reduces the source/drain series resistance. It is does not only serve useful for ultra-thin SOI MOSFET fabrication with arbitrary silicon film thickness, but it is also use in conjunction with the Recess-Channel technique.

原文English
頁面172-173
頁數2
出版狀態Published - 1 十二月 1993
事件Proceedings of the IEEE International SOI Conference - Palm Springs, CA, USA
持續時間: 5 十月 19937 十月 1993

Conference

ConferenceProceedings of the IEEE International SOI Conference
城市Palm Springs, CA, USA
期間5/10/937/10/93

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