Developed is a new Recess-Channel technology that significantly reduces the source/drain series resistance. It is does not only serve useful for ultra-thin SOI MOSFET fabrication with arbitrary silicon film thickness, but it is also use in conjunction with the Recess-Channel technique.
|出版狀態||Published - 1 十二月 1993|
|事件||Proceedings of the IEEE International SOI Conference - Palm Springs, CA, USA|
持續時間: 5 十月 1993 → 7 十月 1993
|Conference||Proceedings of the IEEE International SOI Conference|
|城市||Palm Springs, CA, USA|
|期間||5/10/93 → 7/10/93|