Recent trends in indium nitride nanomaterials

The group III nitrides including gallium nitride, aluminum nitride, and indium nitride (InN) represents a formidable group of semiconductors with a high impact in optoelectronics. This is primarily due to their direct bandgaps that span a wide spectral range with the added flexibility of combining these materials in the ternary form. The momentum for research in nanostructured InN is growing. These materials often serve as semiconductor sensor backbones also. InN, lately, has been at the centre of attraction because of its controversial bandgap and the challenges involved in synthesis and understanding the complexities of the material. This review attempts to present the recent developments in the growth and properties exhibited by the low dimensional InN materials.