Recent Progress of E-mode Gallium Nitride Metal–Insulator–Semiconductor -High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG-HEMT) for Power Switching Applications

Jui Sheng Wu, You Chen Weng, Tsung Ying Yang, Chia Hsun Wu, Chih Chieh Lee, Hiroshi Iwai, Edward Yi Chang*

*此作品的通信作者

研究成果: Review article同行評審

摘要

Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure devices have proven to be highly effective for high-frequency power amplifiers and power switching applications with improved performance compared to those made with traditional silicon technology and other advanced semiconductor technologies. The development of enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) and metal–insulator–semiconductor HEMTs (MIS-HEMTs) has been a focus in recent years due to their potential applications. Arising from the concept of a flash-memory-like hybrid ferroelectric charge storage structure, the high-performance hybrid ferroelectric charge storage gate (FEG) GaN HEMT has gradually gained a great deal of attention due to the concept being a useful and versatile tool to realize E-mode operations. This article attempts to review the latest progresses in this technology, including alternative improvements and device characteristics. Future challenges for the E-mode FEG-HEMT are also discussed.

原文English
文章編號2300018
期刊Physica Status Solidi (A) Applications and Materials Science
220
發行號16
DOIs
出版狀態Published - 8月 2023

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