Recent Enhancements in the Standard BSIM-BULK MOSFET Model

This paper briefly discusses all the recent enhancements made in the BSIM-BULK MOSFET model. It is a charge-based industry-standard model developed by the BSIM group, an advanced version of BSIM4 model (threshold voltage-based). Initially, BSIM-BULK was developed for low-voltage devices and to enhance its capability for high voltage operations, a drift resistance-based model is also included as one of the important enhancements in its recent version. Moreover, the new model for bulk charge effect in the latest version improves the fitting flexibility of current and capacitance models. Several other noticeable enhancements are body bias and gate bias dependence addition to the high voltage model, improved flicker noise model of MOSFET and EDGEFET, adding flicker noise model due to external S/D resistances, and drain-body diode junction current splitting in HVMOS. All the enhancements have been validated with the experimental data and also passed the Gummel and AC symmetry tests. The latest model has better accuracy, convergence, and performance compared to previous versions of BSIM-BULK model.