TY - CHAP
T1 - Recent development of fabrication technologies of nitride LEDs for performance improvement
AU - Horng, Ray Hua
AU - Wuu, Dong Sing
AU - Lin, Chia Feng
AU - Lai, Chun Feng
PY - 2018/1/1
Y1 - 2018/1/1
N2 - In this chapter, we discuss the flip-chip and thin-film types of GaN-based light-emitting diode (LED), which are used to produce devices with better light extraction efficiency and far-field distribution. Flip-chip LEDs (FCLEDs) with a micro-pillar array structure and FCLEDs with a geometric oblique sapphire structure are investigated. Thin-film LEDs (TFLEDs) are fabricated by a combination of wafer bonding and the laser lift-off technique, which are used to transfer the GaN epilayer to a more conductive substrate to give better thermal dissipation. GaN TFLEDs with a photonic crystal (PC) surface structure are demonstrated. This study examines the light extraction efficiency, directional far-field patterns, and polarization properties of GaN PC TFLEDs.
AB - In this chapter, we discuss the flip-chip and thin-film types of GaN-based light-emitting diode (LED), which are used to produce devices with better light extraction efficiency and far-field distribution. Flip-chip LEDs (FCLEDs) with a micro-pillar array structure and FCLEDs with a geometric oblique sapphire structure are investigated. Thin-film LEDs (TFLEDs) are fabricated by a combination of wafer bonding and the laser lift-off technique, which are used to transfer the GaN epilayer to a more conductive substrate to give better thermal dissipation. GaN TFLEDs with a photonic crystal (PC) surface structure are demonstrated. This study examines the light extraction efficiency, directional far-field patterns, and polarization properties of GaN PC TFLEDs.
KW - Flip-chip LED (FCLED)
KW - Gallium nitride (GaN)
KW - Light-emitting diode (LED)
KW - Photonic crystal (PC)
KW - Thin-film LED (TFLED)
UR - http://www.scopus.com/inward/record.url?scp=85054379123&partnerID=8YFLogxK
U2 - 10.1016/B978-0-08-101942-9.00006-X
DO - 10.1016/B978-0-08-101942-9.00006-X
M3 - Chapter
AN - SCOPUS:85054379123
SN - 9780081019429
SP - 209
EP - 241
BT - Nitride Semiconductor Light-Emitting Diodes (LEDs)
PB - Elsevier
ER -