Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

I. H. Chen, W. T. Lai, Pei-Wen Li

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (GD) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V1/2, of G D valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV1/2≅ (1- 0.11n) × 5.15kBT, providing the primary thermometric quantity. The depth of GD valley is also proportional to charging energy (E C) and 1/T via ΔGD≅ EC/9.18k BT, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.

原文English
文章編號243506
期刊Applied Physics Letters
104
發行號24
DOIs
出版狀態Published - 16 6月 2014

指紋

深入研究「Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime」主題。共同形成了獨特的指紋。

引用此