Reactive ion etching of ZnO using a Cl2/Ar mixture

K. P. Hsueh, R. J. Hou, Cheng-Huang Kuo, C. J. Tun

研究成果: Conference contribution同行評審

摘要

This study investigates physical properties of ZnO films after reactive ions etching (RIE) using a Cl2Ar mixture by varying the gas flow ratio, radio-frequency (rf) plasma power and chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. The etching rate at a Cl2/Ar flow rate of 150/10 sccm, a work pressure of 60 m Torr and an rf power of 300 W is higher than under any other conditions. Additionally, the root-mean-square (rms) roughness of 24.20 nm is the highest at a Cl2/Ar flow rate of 150/10 sccm, a work pressure of 190 mTorr and an rf power of 300 W; it is suitable for roughened transparent contact layer (TCL) in light-emitting diodes (LED5). Bearing ratio analysis reveals that, under this condition, the nanorods covered 25.41 % of the total surface area and their maximum height was approximately 150.83 nm.

原文English
主出版物標題ECS Transactions - ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors
發行者Electrochemical Society Inc.
頁面95-101
頁數7
版本12
ISBN(列印)9781566776585
DOIs
出版狀態Published - 1 1月 2008
事件ZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors - 214th ECS Meeting - Honolulu, HI, United States
持續時間: 12 10月 200817 10月 2008

出版系列

名字ECS Transactions
號碼12
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceZnO Based Thin Films, Nano-Wires, and Nano-Belts for Photonic and Electronic Devices and Sensors - 214th ECS Meeting
國家/地區United States
城市Honolulu, HI
期間12/10/0817/10/08

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