Re-examination the effects of selenium segregation on the Schottky barrier height reduction of the NiGe/Ge contact

Yi Ju Chen, Hung Ju Chou, Ching I. Li, Bing-Yue Tsui

    研究成果: Conference contribution同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.

    原文English
    主出版物標題2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面108-109
    頁數2
    ISBN(電子)9781509007264
    DOIs
    出版狀態Published - 27 9月 2016
    事件21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
    持續時間: 12 6月 201613 6月 2016

    出版系列

    名字2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

    Conference

    Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
    國家/地區United States
    城市Honolulu
    期間12/06/1613/06/16

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