@inproceedings{a8f0ba53aa894b089e8f360b8a9aa022,
title = "Re-examination the effects of selenium segregation on the Schottky barrier height reduction of the NiGe/Ge contact",
abstract = "Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.",
author = "Chen, {Yi Ju} and Chou, {Hung Ju} and Li, {Ching I.} and Bing-Yue Tsui",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 ; Conference date: 12-06-2016 Through 13-06-2016",
year = "2016",
month = sep,
day = "27",
doi = "10.1109/SNW.2016.7578006",
language = "English",
series = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "108--109",
booktitle = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",
address = "美國",
}