Rapid self-assembly of Ni nanodots on Si substrate covered by a less-adhesive and heat-accumulated SiO2 layers

Gong Ru Lin*, Hao-Chung Kuo, Huang Shen Lin, Chih Chiang Kao

*此作品的通信作者

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17 引文 斯高帕斯(Scopus)

摘要

Rapid self-aggregation of Ni nanodots on Si substrate covered with a thin SiO2 buffered layer is investigated. The Ni nanodots can hardly self-aggregate on highly heat-dissipated Si substrate with a thermal conductivity of 148 W/m K. Adding a 200-Å-thick SiO2 buffer with an ultralow thermal conductivity of 1.35 W/m K prevents the formation of NiSi2 compounds, enhances the heat accumulation, and releases the adhesion at Ni/Si interface, which greatly accelerates the self-assembly of Ni nanodots. Dense Ni nanodots with size and density of 30 nm and 7 × 10 10 cm-2, respectively, can be formatted after rapid thermal annealing at 850°C for 22 s.

原文English
文章編號073108
期刊Applied Physics Letters
89
發行號7
DOIs
出版狀態Published - 25 八月 2006

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