Random work function variation induced threshold voltage fluctuation in 16-nm bulk FinFET devices with high-κ-metal-gate material

Hui Wen Cheng*, Yiming Li

*此作品的通信作者

研究成果: Conference contribution同行評審

16 引文 斯高帕斯(Scopus)

摘要

The random work-function (WK) induced threshold voltage fluctuation (σVth) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced σVth are studied analytically. The results of this study allow us to identify suitable materials for metal gate and to clarify reduction of the σV th owing to WKF. Among four different gate materials, the titanium nitride possesses the smallest σVth due to small size of metal grains.

原文English
主出版物標題2010 14th International Workshop on Computational Electronics, IWCE 2010
頁面331-334
頁數4
DOIs
出版狀態Published - 2010
事件2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy
持續時間: 26 10月 201029 10月 2010

出版系列

名字2010 14th International Workshop on Computational Electronics, IWCE 2010

Conference

Conference2010 14th International Workshop on Computational Electronics, IWCE 2010
國家/地區Italy
城市Pisa
期間26/10/1029/10/10

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