Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors

Chen Ming Lee, Bing-Yue Tsui

    研究成果: Conference contribution同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.

    原文English
    主出版物標題2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
    DOIs
    出版狀態Published - 2013
    事件2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
    持續時間: 22 4月 201324 4月 2013

    出版系列

    名字2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

    Conference

    Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
    國家/地區Taiwan
    城市Hsinchu
    期間22/04/1324/04/13

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