TY - GEN
T1 - Random telegraph signal noise arising from grain boundary traps in nano-scale poly-Si nanowire thin-film transistors
AU - Lee, Chen Ming
AU - Tsui, Bing-Yue
PY - 2013
Y1 - 2013
N2 - Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.
AB - Nano-scale poly-Si thin-film transistor (TFT) is a promising device for the three-dimensional integrated circuits (3D IC) and 3D stacked flash memories. Random telegraph signal noise (RTN) arising from grain boundary traps is identified and a grain-boundary-induced-fluctuation (GBIF) model is proposed for the first time. Amonia plasma treatment can suppress this RTN source effectively.
UR - http://www.scopus.com/inward/record.url?scp=84881158988&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2013.6545598
DO - 10.1109/VLSI-TSA.2013.6545598
M3 - Conference contribution
AN - SCOPUS:84881158988
SN - 9781467330817
T3 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
BT - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
T2 - 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
Y2 - 22 April 2013 through 24 April 2013
ER -