TY - JOUR
T1 - Random telegraph noise in flash memories - Model and technology scaling
AU - Fukuda, Koichi
AU - Shimizu, Yuui
AU - Amemiya, Kazumi
AU - Kamoshida, Masahiro
AU - Hu, Chen-Ming
PY - 2007/12/1
Y1 - 2007/12/1
N2 - This paper presents the first statistical model of Vt fluctuation (ΔVtcell) in a floating-gate flash memory due to random telegraph noise. It considers current-path percolation, which generates a large-amplitude-noise tail, caused by dopant induced surface potential non-uniformity. It concludes that the impact of scaling is weaker than the widely-accepted 1/LeffWeff trend. 3-σ ΔVt cell is estimated to increase by 1.8x rather than >10x from 90nm to 20nm technology nodes.
AB - This paper presents the first statistical model of Vt fluctuation (ΔVtcell) in a floating-gate flash memory due to random telegraph noise. It considers current-path percolation, which generates a large-amplitude-noise tail, caused by dopant induced surface potential non-uniformity. It concludes that the impact of scaling is weaker than the widely-accepted 1/LeffWeff trend. 3-σ ΔVt cell is estimated to increase by 1.8x rather than >10x from 90nm to 20nm technology nodes.
UR - http://www.scopus.com/inward/record.url?scp=48649096104&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2007.4418893
DO - 10.1109/IEDM.2007.4418893
M3 - Conference article
AN - SCOPUS:48649096104
SN - 0163-1918
SP - 169
EP - 172
JO - Technical Digest - International Electron Devices Meeting, IEDM
JF - Technical Digest - International Electron Devices Meeting, IEDM
M1 - 4418893
T2 - 2007 IEEE International Electron Devices Meeting, IEDM
Y2 - 10 December 2007 through 12 December 2007
ER -