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Random nanosized metal grains and interface-trap fluctuations in emerging CMOS technologies
Yiming Li
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此作品的通信作者
電信工程研究所
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引文 斯高帕斯（Scopus）
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深入研究「Random nanosized metal grains and interface-trap fluctuations in emerging CMOS technologies」主題。共同形成了獨特的指紋。
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Keyphrases
Complementary Metal-oxide-semiconductor Technology
100%
Nanograins
100%
Metal Interfaces
100%
Interface Trap Fluctuation
100%
Work Function Fluctuation
75%
PMOSFET
25%
HfO2
25%
Metal Gate
25%
Grain Size
25%
Three-dimensional Devices
25%
Threshold Voltage
25%
Complementary Metal Oxide Semiconductor
25%
Metal-oxide-semiconductor Devices
25%
Device Simulation
25%
Surface Potential
25%
Potential Barrier
25%
TiN Gate
25%
Random Dopant Fluctuation
25%
Metal Grains
25%
Gate Width
25%
Local Potential
25%
Independent Distribution
25%
Vth Fluctuation
25%
Statistical Sum
25%
Random Position Effect
25%
Material Science
Complementary Metal-Oxide-Semiconductor Device
100%
Doping (Additives)
50%
Density
50%
Silicon
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Grain Size
50%
Surface (Surface Science)
50%
Physics
Work Function
100%
Metal Oxide Semiconductor
100%
Field Effect Transistor
33%
Threshold Voltage
33%
Potential Barrier
33%
Semiconductor Device
33%
Grain Size
33%
Engineering
Complementary Metal-Oxide-Semiconductor
100%
Interface Trap
100%
Dopants
25%
Metal Gate
25%
Metal-Oxide-Semiconductor Field-Effect Transistor
25%
Surface Potential
25%
Complementary Metal-Oxide-Semiconductor Device
25%
Gate Width
25%
Mathematics
Overestimation
100%