Random-dopant-induced variability in nano-CMOS devices and digital circuits

Keyphrases

• Nanoscale CMOS 100%
• CMOS Devices 100%
• Digital Circuits 100%
• Random Dopants 100%
• Time Fluctuation 100%
• Induced Variability 100%
• Discrete Dopants 75%
• Delay Time 50%
• Transistor 50%
• Nand 50%
• Characteristic Fluctuation 50%
• Transient Behavior 25%
• CMOS Inverter 25%
• Device Characteristics 25%
• Gate Circuit 25%
• CMOS Circuits 25%
• High-to-Low 25%
• Fall Time 25%
• Circuit Topology 25%
• Rise Time 25%
• Device Operation 25%
• Doping Effect 25%
• Gate Delay 25%
• Gate Capacitance 25%
• Low Delay 25%
• High Delays 25%
• Time Characteristics 25%
• Operation Status 25%
• Field Effect Transistor Circuits 25%
• Coupled Device-circuit Simulation 25%
• Nanoscale Circuits 25%

Engineering

• Dopants 100%
• Digital Circuits 100%
• Delay Time 40%
• Nanoscale 40%
• Field-Effect Transistor 20%
• Transients 20%
• Circuit Simulation 20%
• Timing Circuits 20%
• Fall Time 20%
• Coupled Device 20%
• Electric Network Topology 20%
• Rise Time 20%
• Gate Capacitance 20%
• Random Nature 20%
• Inverter 20%