Raman scattering in ternary AlAsxSb1 - X films

H. C. Lin; J. Ou; C. H. Hsu; Wei-Kuo Chen; M. C. Lee

doi:10.1016/S0038-1098(98)00281-6

Raman scattering in ternary AlAs_xSb_{1 - X} films

H. C. Lin^*, J. Ou, C. H. Hsu, Wei-Kuo Chen, M. C. Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Thin films of the ternary AlAs_xSb_{1 - x} alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E₀ and E₁ transitions of AlAs and AlSb.

原文	English
頁（從 - 到）	547-551
頁數	5
期刊	Solid State Communications
卷	107
發行號	10
DOIs	https://doi.org/10.1016/S0038-1098(98)00281-6
出版狀態	Published - 29 7月 1998

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10.1016/S0038-1098(98)00281-6

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@article{a21a6d8bf57d4379911fd479628d813f,

title = "Raman scattering in ternary AlAsxSb1 - X films",

abstract = "Thin films of the ternary AlAsxSb1 - x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E0 and E1 transitions of AlAs and AlSb.",

keywords = "A. semiconductors, A. thin films, D. optical properties, D. phonons",

author = "Lin, {H. C.} and J. Ou and Hsu, {C. H.} and Wei-Kuo Chen and Lee, {M. C.}",

year = "1998",

month = jul,

day = "29",

doi = "10.1016/S0038-1098(98)00281-6",

language = "English",

volume = "107",

pages = "547--551",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "10",

}

TY - JOUR

T1 - Raman scattering in ternary AlAsxSb1 - X films

AU - Lin, H. C.

AU - Ou, J.

AU - Hsu, C. H.

AU - Chen, Wei-Kuo

AU - Lee, M. C.

PY - 1998/7/29

Y1 - 1998/7/29

N2 - Thin films of the ternary AlAsxSb1 - x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E0 and E1 transitions of AlAs and AlSb.

AB - Thin films of the ternary AlAsxSb1 - x alloys, prepared by metalorganic chemical vapor deposition, were studied by Raman scattering. The Raman shifts show one-mode behavior and the forbidden TO phonon scattering is observable due to the relaxed selection rule. Our results of the mixed compounds can be interpreted using the spatial correlation model. Moreover, the enhanced scattering was observed at 2.15 and 2.8 eV which are attributable to the E0 and E1 transitions of AlAs and AlSb.

KW - A. semiconductors

KW - A. thin films

KW - D. optical properties

KW - D. phonons

UR - http://www.scopus.com/inward/record.url?scp=0032120773&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(98)00281-6

DO - 10.1016/S0038-1098(98)00281-6

M3 - Article

AN - SCOPUS:0032120773

SN - 0038-1098

VL - 107

SP - 547

EP - 551

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Raman scattering in ternary AlAsxSb1 - X films

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Raman scattering in ternary AlAs_xSb_{1 - X} films