Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

Wei-Kuo Chen; Heng Ching Lin; Yung Chung Pan; Jehn Ou; Chen Ke Shu; Wen Hsiung Chen; Ming Chih Lee

doi:10.1143/JJAP.37.4870

Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

Wei-Kuo Chen^*, Heng Ching Lin, Yung Chung Pan, Jehn Ou, Chen Ke Shu, Wen Hsiung Chen, Ming Chih Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600°C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450°C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase was found to be dominant in the deposited InN film.

原文	English
頁（從 - 到）	4870-4871
頁數	2
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	37
發行號	9 A
DOIs	https://doi.org/10.1143/JJAP.37.4870
出版狀態	Published - 9月 1998

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title = "Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy",

abstract = "We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600°C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450°C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase was found to be dominant in the deposited InN film.",

keywords = "InN, MOVPE, Raman scattering, X-ray",

author = "Wei-Kuo Chen and Lin, {Heng Ching} and Pan, {Yung Chung} and Jehn Ou and Shu, {Chen Ke} and Chen, {Wen Hsiung} and Lee, {Ming Chih}",

year = "1998",

month = sep,

doi = "10.1143/JJAP.37.4870",

language = "English",

volume = "37",

pages = "4870--4871",

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T1 - Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

AU - Chen, Wei-Kuo

AU - Lin, Heng Ching

AU - Pan, Yung Chung

AU - Ou, Jehn

AU - Shu, Chen Ke

AU - Chen, Wen Hsiung

AU - Lee, Ming Chih

PY - 1998/9

Y1 - 1998/9

N2 - We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600°C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450°C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase was found to be dominant in the deposited InN film.

AB - We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600°C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450°C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase was found to be dominant in the deposited InN film.

KW - InN

KW - MOVPE

KW - Raman scattering

KW - X-ray

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U2 - 10.1143/JJAP.37.4870

DO - 10.1143/JJAP.37.4870

M3 - Article

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SN - 0021-4922

VL - 37

SP - 4870

EP - 4871

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 9 A

ER -

Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy

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