Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/Alx Ga1-xas quantum wells

Kien-Wen Sun*, H. Y. Chang, C. M. Wang, T. S. Song, S. Y. Wang, C. P. Lee

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Using two optical techniques, we have studied the hot electron-optical phonon interactions in GaAs/AlxGa1-xAs multiple quantum wells. Raman scattering measurements at 15 K are presented for the Al composition of x = 0.3, 0.5, 0.7 and 1.0. The GaAs-like and AlAs-like phonon frequencies of the first-order modes are also measured as a function of Al compositions. The optical phonon energies emitted by the photoexcited electrons in quantum wells are determined by using hot electron-neutral acceptor luminescence techniques. It is shown that the relaxation of hot electrons in the quantum wells is dominated by the GaAs LO phonon emission for small x, but by AlAs-like LO phonons for larger Al composition.

原文English
主出版物標題Proceedings of the 8th International Symposium Nanostructures
主出版物子標題Physics and Technology
編輯Zh. alferov, L. Esaki, ZH. Alferov, L. Esaki
頁面165-168
頁數4
出版狀態Published - 6月 2000
事件Proceedings of the 8th International Symposium Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
持續時間: 19 6月 200023 6月 2000

出版系列

名字Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

Conference

ConferenceProceedings of the 8th International Symposium Nanostructures: Physics and Technology
國家/地區Russian Federation
城市St. Petersburg
期間19/06/0023/06/00

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