Radio Frequency Characteristics of InGaAs FE-FETs with Scaled Channel Length

RF performance comparison between InGaAs MOSFETs and ferroelectric field-effect transistors (FEFETs) as a function of channel length (Lch) is investigated using a technology computer-aided design (TCAD) simulator. The RF characteristics and energy efficiencies of FE-FETs are shown to have performance parity or even inferiority as compared with the conventional MOSFETs at relatively long Lch. However, as Lch scaled down, FE-FETs with substantial performance enhancement are observed. The highest improvement in unit gain cutoff frequency (fT) and maximum oscillation frequency (fMAX) is 15.4% (Lch = 75 nm) and 22.5% (Lch = 85 nm), respectively. In addition, for FE-FETs, device energy efficiencies are shown to achieve much higher improvement of 53.4% and 69.3% in transconductance generation factor (TGF) and transconductance frequencyproduct (TFP), respectively, at an optimizedLch of 15 nm. The superior RF properties obtained in FE-FETs can be attributed to the higher effective electron velocity (Veff), better gate controllability, and reduced gate resistance (Rg).